Graphene and metal interconnects with reduced contact resistance

US9293412B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Junjing Bao · Fishkill, US
• Griselda Bonilla · Hopewell Junction, US
• Samuel S. Choi · Hopewell Junction, US
• Ronald G. Filippi · Wappingers Falls, US
• Naftali E. Lustig · Ossining, US
• Andrew H. Simon · Fishkill, US

Key dates

• Filing date: Dec 4, 2014
• Grant date: Mar 22, 2016
• Expiry date: Dec 4, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A structure including a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions, a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions, and a metal via comprising a palladium liner extends vertically and electrically connects the first metal line with the second metal line, the via is at least partially embedded in the first metal line such that the palladium liner is in direct contact with at least an end portion of the one or more graphene portions of the first metal line.