Methods of forming fin isolation regions on finFET semiconductor devices using an oxidation-blocking layer of material
US9349658B1 · kind B1 · utility
20Cited by
0References
16Claims
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Key dates
| Filing date | Jan 29, 2015 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Jan 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative embodiment involves forming a plurality of trenches in a substrate so as to define a fin, forming a first oxidation-blocking layer of insulating material in the trenches so as to cover a portion, but not all, of the sidewalls of the lower portion of the fin, forming a second layer of insulating material above the first oxidation-blocking layer of insulating material, and performing a thermal anneal process to convert part, but not all, of the lower portion of the fin positioned above the first oxidation-blocking layer of insulating material into an oxide fin isolation region positioned under the fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.