Opposite polarity borderless replacement metal contact scheme
US9390979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2014 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Oct 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved semiconductor structure and methods of fabrication that provide improved transistor contacts in a semiconductor structure are provided. A set of masks is formed over a portion of the semiconductor structure. Each mask in this set of masks covers at least one source/drain (s/d) contact location. An oxide layer is removed from remainder portions of the semiconductor structure that are not covered by the set of masks. Then an opposite-mask fill layer is formed in the remainder portions from which the oxide layer was removed. The oxide layer is then removed from the remainder of the semiconductor structure, i.e., the portion previously covered by the set of masks and contacts are formed to the at least s/d contact location in the recesses formed by the removal of the remainder of the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.