Methods for forming resistive switching memory elements by heating deposited layers
US9397292B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Oct 2, 2014 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Nov 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.