Forming merged lines in a metallization layer by replacing sacrificial lines with conductive lines
US9412655B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2015 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Jan 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a plurality of sacrificial lines embedded in a first dielectric layer. A line merge opening and a line cut opening are formed in a hard mask layer formed above the first dielectric layer. Portions of the first dielectric layer exposed by the line merge opening are removed to define a line merge recess. A portion of a selected sacrificial line exposed by the line cut opening is removed to define a line cut recess between first and second segments of the selected sacrificial line. A second dielectric layer is formed in the line cut recess. The hard mask is removed. The plurality of sacrificial lines is replaced with a conductive material to define at least one line having third and fourth segments in locations previously occupied by the first and second segments and to define a line-merging conductive structure in the line merge recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.