Methods of forming a combined gate and source/drain contact structure and the resulting device
US9455254B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 7, 2014 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Nov 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One method disclosed herein includes, among other things, forming a gate cap layer above a recessed final gate structure and above recessed sidewall spacers, forming a recessed trench silicide region that is conductively coupled to the first source/drain region, the recessed trench silicide region having an upper surface that is positioned at a level that is below the recessed upper surface of the sidewall spacers, forming a combined contact opening in at least one layer of material that exposes a conductive portion of the recessed final gate structure and a portion of the trench silicide region, and forming a combined gate and source/drain contact structure in the combined contact opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.