Method and structure of forming controllable unmerged epitaxial material
US9455331B1 · kind B1 · utility
34Cited by
3References
14Claims
0Family size
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Key dates
| Filing date | Jul 10, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Jul 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A method of forming a semiconductor device that includes forming a plurality of semiconductor pillars. A dielectric spacer is formed between at least one set of adjacent semiconductor pillars. Semiconductor material is epitaxially formed on sidewalls of the adjacent semiconductor pillars, wherein the dielectric spacer obstructs a first portion of epitaxial semiconductor material formed on a first semiconductor pillar from merging with a second portion of epitaxial semiconductor material formed on a second semiconductor pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.