Methods for fabricating anode shorted field stop insulated gate bipolar transistor
US9478646B2 · kind B2 · utility
3Cited by
12References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 27, 2011 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an anode-shorted field stop insulated gate bipolar transistor (IGBT) comprises selectively forming first and second semiconductor implant regions of opposite conductivity types. A field stop layer of a second conductivity type can be grown onto or implanted into the substrate. An epitaxial layer can be grown on the substrate or on the field stop layer. One or more insulated gate bipolar transistors (IGBT) component cells are formed within the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.