Unipolar-switching perpendicular MRAM and method for using same
US9502092B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Dec 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
MRAM devices that are switched by unipolar electron flow are described. Embodiments use arrays of cells that include a diode or transistor with a pMTJ. The switching between the high and low resistance states of the pMTJ is achieved by electron flow in the same direction, i.e. a unipolar flow. Embodiments of the invention include methods of operating unipolar MRAM devices that include a read step after a write step to verify the operation. Embodiments also include methods of operating unipolar MRAM devices that include an iterative stepped-voltage write process that includes a plurality of write-read steps that begin with a selected voltage for the write pulse for the first iteration and gradually increase the voltage for the write pulse for the next iteration until a successful read operation occurs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.