Strained finFET device fabrication

US9502411B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Bruce B. Doris · Brewster, US
• Hong He · Schenectady, US
• Sivananda K. Kanakasabapathy · Niskayuna, US
• Gauri Karve · Cohoes, US
• Fee Li Lie · Albany, US
• Stuart A. Sieg · Albany, US

Key dates

• Filing date: Aug 24, 2015
• Grant date: Nov 22, 2016
• Expiry date: Aug 24, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0128
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a fin on a substrate comprises patterning and etching a layer of a first semiconductor material to define a strained fin, depositing a layer of a second semiconductor material over the fin, the second semiconductor material operative to maintain the a strain in the strained fin, etching to remove a portion of the second semiconductor material to define a cavity that exposes a portion of the fin, etching to remove the exposed portion of the fin such that the fin is divided into a first segment and a second segment, and depositing an insulator material in the cavity, the insulator material contacting the first segment of the fin and the second segment of the fin.