Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process
US9543163B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2013 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Oct 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for etching a material layer disposed on the substrate using a combination of a main etching step and a cyclical etching process are provided. The method includes performing a main etching process in a processing chamber to an oxide layer, forming a feature with a first predetermined depth in the oxide layer, performing a treatment process on the substrate by supplying a treatment gas mixture into the processing chamber to treat the etched feature in the oxide layer, performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process further etches the feature to a second predetermined depth, and performing a transition process on the etched substrate by supplying a transition gas mixture into the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.