Patent · US Active

Compositions and methods for selectively etching titanium nitride

US9546321B2 · kind B2 · utility

4Cited by
26References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 27, 2012
Grant dateJan 17, 2017
Priority date
Expiry dateDec 27, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/31144
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.