Compositions and methods for selectively etching titanium nitride
US9546321B2 · kind B2 · utility
4Cited by
26References
20Claims
0Family size
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Key dates
| Filing date | Dec 27, 2012 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Dec 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.