Methods of modulating strain in PFET and NFET FinFET semiconductor devices
US9589849B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 27, 2015 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Jul 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes, among other things, forming a plurality of initial fins that have the same initial axial length and the same initial strain above a substrate, performing at least one etching process so as to cut a first fin to a first axial length and to cut a second fin to a second axial length that is less than the first axial length, wherein the cut first fin retains a first amount of the initial strain and the cut second fin retains about zero of the initial strain or a second amount of the initial strain that is less than the first amount, and forming gate structures around the first and second cut fins to form FinFET devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.