Patent · US Active

Semiconductor component and method of manufacture

US9620443B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 13, 2016
Grant dateApr 11, 2017
Priority date
Expiry dateJul 13, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/00014
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure, a second device receiving structure, a first lead and a second lead. A first semiconductor chip is coupled to the first device receiving structure and a second semiconductor chip is coupled to the first semiconductor chip and the second device receiving structure. The first semiconductor chip is configured from a silicon semiconductor material and has a gate bond pad, a source bond pad, and a drain bond pad, and the second semiconductor chip is configured from a gallium nitride semiconductor chip and has a gate bond pad, a source bond pad, and a drain bond pad. In accordance with another embodiment, a method for manufacturing a semiconductor component includes coupling a first semiconductor chip to a support and coupling a second semiconductor chip to the support.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.