Method and structure for enabling controlled spacer RIE
US9627277B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jun 9, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Jun 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure to enable reliable dielectric spacer endpoint detection by utilizing a sacrificial spacer fin are provided. The sacrificial spacer fin that is employed has a same pitch as the pitch of each semiconductor fin and the same height as the dielectric spacers on the sidewalls of each semiconductor fin. Exposed portions of the sacrificial spacer fin are removed simultaneously during a dielectric spacer reactive ion etch (RIE). The presence of the sacrificial spacer fin improves the endpoint detection of the spacer RIE and increases the endpoint signal intensity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.