Early PTS with buffer for channel doping control
US9647086B2 · kind B2 · utility
4Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Aug 14, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Aug 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of performing an early PTS implant and forming a buffer layer under a bulk or fin channel to control doping in the channel and the resulting bulk or fin device are provided. Embodiments include forming a recess in a substrate; forming a PTS layer below a bottom surface of the recess; forming a buffer layer on the bottom surface and on side surfaces of the recess; forming a channel layer on and adjacent to the buffer layer; and annealing the channel, buffer, and PTS layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.