Methods of removing a material layer from a substrate using water vapor treatment
US9653327B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2011 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Nov 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having different material layers disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate into a processing chamber, the substrate having a dielectric layer disposed thereon forming openings on the substrate, exposing the dielectric layer disposed on the substrate to water vapor supplied into the chamber to form a plasma in the water vapor, maintaining a process pressure in the chamber at between about 1 Torr and about 120 Torr, and cleaning the contact structure formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.