Trench metal-insulator-metal capacitor with oxygen gettering layer
US9653534B2 · kind B2 · utility
1Cited by
8References
8Claims
0Family size
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Key dates
| Filing date | Dec 17, 2014 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Apr 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.