Patent · US Active

Interconnect structure with enhanced reliability

US9673089B2 · kind B2 · utility

2Cited by
10References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 31, 2014
Grant dateJun 6, 2017
Priority date
Expiry dateJul 25, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An improved interconnect structure including a dielectric layer having a conductive feature embedded therein, the conductive feature having a first top surface that is substantially coplanar with a second top surface of the dielectric layer; a metal cap layer located directly on the first top surface, wherein the metal cap layer does not substantially extend onto the second top surface; a first dielectric cap layer located directly on the second top surface, wherein the first dielectric cap layer does not substantially extend onto the first top surface and the first dielectric cap layer is thicker than the metal cap layer; and a second dielectric cap layer on the metal cap layer and the first dielectric cap layer. A method of forming the interconnect structure is also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.