Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer
US9679625B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2015 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Nov 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.