Patent · US Active

Trench transistor having a doped semiconductor region

US9711621B2 · kind B2 · utility

0Cited by

19References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Franz Hirler · Isen, DE
Uwe Wahl · Munich, DE
Thorsten Meyer · Regensburg, DE
Michael Rüb · Faak am See, AT
Armin Willmeroth · Friedberg, DE
Markus Schmitt · Neubiberg, DE
Carolin Tolksdorf · Ebersberg, DE
Carsten Schaeffer · Annenheim, AT

Key dates

Filing date	Jul 30, 2014
Grant date	Jul 18, 2017
Priority date	—
Expiry date	Jul 30, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/516
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A trench transistor having a semiconductor body includes a source region, a body region, a drain region electrically connected to a drain contact, and a gate trench including a gate electrode which is isolated from the semiconductor body. The gate electrode is configured to control current flow between the source region and the drain region along at least a first side wall of the gate trench. The trench transistor further includes a doped semiconductor region having dopants introduced into the semiconductor body through an unmasked part of the walls of a trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.