Cyclic spacer etching process with improved profile control
US9721807B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2016 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Mar 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.