Symmetric plasma process chamber
US9741546B2 · kind B2 · utility
365Cited by
16References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2012 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Jun 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3344
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.