Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof

US9748354B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Wei V. Tang · Santa Clara, US
• Paul F. Ma · Santa Clara, US
• Steven C. H. Hung · Sunnyvale, US
• Michael P. Chudzik · Beacon, US
• Siddarth A. Krishnan · Newark, US
• Wenyu Zhang · San Jose, US
• Seshadri Ganguli · Sunnyvale, US
• Naomi Yoshida · Sunnyvale, US
• Lin Dong · Sunnyvale, US
• Yixiong Yang · San Jose, US
• Liqi Wu · San Jose, US
• Shih Chung Chen · Hsinchu, TW

Key dates

• Filing date: Feb 15, 2016
• Grant date: Aug 29, 2017
• Expiry date: Feb 15, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer.