Method and structure for cut material selection

US9779944B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Sean D. Burns · Yorktown Heights, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Matthew E. Colburn · Hopewell Junction, US
• Nelson Felix · Slingerlands, US
• Sivananda K. Kanakasabapathy · Niskayuna, US
• Yann Mignot · Slingerlands, US
• Christopher J. Penny · Saratoga Springs, US
• Roger A. Quon · Austin, US
• Nicole Saulnier · Albany, US

Key dates

• Filing date: Sep 13, 2016
• Grant date: Oct 3, 2017
• Expiry date: Sep 13, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76816
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for manufacturing a semiconductor device includes forming a plurality of mandrels on a dielectric layer, conformally depositing a spacer layer on the plurality of mandrels, removing a portion of the spacer layer from a top surface of at least one of the plurality of mandrels, removing the at least one of the plurality of mandrels to create at least one opening, and filling the at least opening with a cut fill material, wherein the cut fill material comprises the same material as a material of the spacer layer.