Reaction chamber passivation and selective deposition of metallic films
US9803277B1 · kind B1 · utility
74Cited by
21References
19Claims
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Key dates
| Filing date | Jun 8, 2016 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Jun 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.