Patent · US Active

Method of manufacturing a layer structure having partially sealed pores

US9929111B2 · kind B2 · utility

2Cited by

0References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Martin Mischitz · Wernberg, AT
Markus Heinrici · Klagenfurt, AT
Barbara Eichinger · Villach, AT
Manfred Schneegans · Vaterstetten, DE
Stefan Krivec · Villach, AT

Key dates

Filing date	Mar 17, 2017
Grant date	Mar 27, 2018
Priority date	—
Expiry date	Mar 17, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/35121
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a layer structure includes: forming a first layer over a substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface; wherein a porosity of the first layer is greater than a porosity of the substrate and greater than a porosity of the second layer; wherein the second layer is formed by physical vapor deposition; and wherein the first layer and the second layer are formed from the same solid material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.