Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs
US9991156B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2016 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jun 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76892
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure having a pitch of less than 40 nanometers and a self-aligned quadruple patterning process for forming the interconnect structure includes three types of lines: a β line defined by a patterned bottom mandrel formed in the self-aligned quadruple patterning process; a γ line defined by location underneath a top mandrel formed in the self-aligned quadruple patterning process; and an α line defined by elimination located underneath neither the top mandrel or the bottom mandrel formed in the self-aligned quadruple patterning process. The interconnect structure further includes multi-track jogs selected from a group consisting of a βγβ jog; a βαβ jog; an αβγ jog; a γβα jog, and combinations thereof. The first and third positions refer to the uncut line and the second position refers to the cut line in the self-aligned quadruple patterning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.