Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer

USRE47975E1 · kind E1 · reissue

Assignee

• Avalanche Technology, Inc. · US

Inventors

• Jing Zhang · Los Altos, US
• Yiming Huai · Pleasanton, US
• Rajiv Yadav Ranjan · San Jose, US
• Yuchen Zhou · San Jose, US
• Zihui Wang · Milpitas, US
• Xiaojie Hao · Milpitas, US

Key dates

• Filing date: Aug 10, 2018
• Grant date: May 5, 2020
• Expiry date: Aug 10, 2038

Classification

• Technology area (CPC —): General

Abstract

An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.