Alfred P. Gnadinger
14Patents
9h-index
10Co-inventors
69Inventor score
Filing activity: Mar 12, 1984 → Aug 4, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5229647A | High density data storage using stacked wafers | Electricity | 483 | Expired |
| US6268796A | Radio frequency identification transponder having integrated antenna | Electricity | 153 | Expired |
| US4800543A | Timepiece communication system | Physics | 113 | Expired |
| US5119154A | Ferroelectric capacitor and method for forming local interconnect | Electricity | 65 | Expired |
| US5273927A | Method of making a ferroelectric capacitor and forming local interconnect | Emerging Cross-Sectional Technologies | 62 | Expired |
| US6714435B1 | Ferroelectric transistor for storing two data bits | Electricity | 24 | Expired |
| US4486943A | Zero drain overlap and self aligned contact method for MOS devices | Electricity | 22 | Expired |
| US6674110B2 | Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric | Electricity | 17 | Expired |
| US6888736B2 | Ferroelectric transistor for storing two data bits | Electricity | 11 | Expired |
| US6825517B2 | Ferroelectric transistor with enhanced data retention | Electricity | 5 | Expired |
| US7973348B1 | Single transistor charge transfer random access memory | Physics | 4 | Active |
| US6790679B2 | Ferroelectric transistor with enhanced data retention | Electricity | 4 | Expired |
| US7034349B2 | Ferroelectric transistor for storing two data bits | Electricity | 3 | Expired |
| US6908772B2 | Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.