Basoene Briggs
7Patents
0h-index
15Co-inventors
34Inventor score
Filing activity: Feb 27, 2018 → Sep 18, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11088070B2 | Method of forming a multi-level interconnect structure in a semiconductor device | Electricity | 0 | Active |
| US11682591B2 | Method for forming transistor structures | Electricity | 0 | Active |
| US12237207B2 | Method for forming a buried metal line in a semiconductor substrate | Electricity | 0 | Active |
| US10763159B2 | Method for forming a multi-level interconnect structure | Electricity | 0 | Active |
| US12432985B2 | Strained semiconductor monocrystalline nanostructure | Electricity | 0 | Active |
| US10395978B2 | Method of patterning target layer | Electricity | 0 | Active |
| US10672655B2 | Method of patterning target layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.