Greg Hames
11Patents
4h-index
12Co-inventors
57Inventor score
Filing activity: Feb 17, 1998 → Oct 27, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6117741A | Method of forming a transistor having an improved sidewall gate structure | Electricity | 72 | Expired |
| US6100160A | Oxide etch barrier formed by nitridation | Electricity | 22 | Expired |
| US6436746B1 | Transistor having an improved gate structure and method of construction | Electricity | 5 | Expired |
| US6307230A | Transistor having an improved sidewall gate structure and method of construction | Electricity | 5 | Expired |
| US10304697B2 | Electronic device with top side pin array and manufacturing method thereof | Electricity | 4 | Active |
| US10832921B2 | Electronic device with top side pin array and manufacturing method thereof | Electricity | 1 | Active |
| US8887382B2 | Method for manufacturing a pendulous accelerometer | Emerging Cross-Sectional Technologies | 1 | Active |
| US6753559B2 | Transistor having improved gate structure | Electricity | 1 | Expired |
| US10157872B2 | Semiconductor device and method of manufacturing thereof | Electricity | 0 | Active |
| US12205827B2 | Electronic device with top side pin array and manufacturing method thereof | Electricity | 0 | Active |
| US10037957B2 | Semiconductor device and method of manufacturing thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.