Inventor · Phoenix, AZ, US

Keejong Kim

10Patents

3h-index

11Co-inventors

53Inventor score

Filing activity: May 9, 2007 → Jan 7, 2021

Most-cited inventions

Patent	Title	Area	Cited by	Status
US7508697B1	Self-repairing technique in nano-scale SRAM to reduce parametric failures	Physics	27	Active
US9646681B1	Memory cell with improved write margin	Physics	15	Active
US11114176B1	Systems and methods to provide write termination for one time programmable memory cells	Physics	4	Active
US10770132B1	SRAM with burst mode address comparator	Physics	3	Active
US10796735B1	Read tracking scheme for a memory device	Physics	2	Active
US11152038B2	Testing one-time programmable (OTP) memory with data input capture through sense amplifier circuit	Physics	2	Active
US10923185B2	SRAM with burst mode operation	Physics	1	Active
US9627041B1	Memory with a voltage-adjustment circuit to adjust the operating voltage of memory cells for BTI effect screening	Physics	0	Active
US9959912B2	Timed sense amplifier circuits and methods in a semiconductor memory	Physics	0	Active
US11527282B2	SRAM with burst mode operation	Physics	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.