Michael D. Eby
7Patents
6h-index
7Co-inventors
56Inventor score
Filing activity: Feb 28, 1986 → Feb 1, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5153853A | Method and apparatus for measuring EEPROM threshold voltages in a nonvolatile DRAM memory device | Physics | 23 | Expired |
| US6744659B1 | Source-biased memory cell array | Physics | 12 | Expired |
| US4658380A | CMOS memory margining control circuit for a nonvolatile memory | Physics | 8 | Expired |
| US7606092B2 | Testing for SRAM memory data retention | Physics | 8 | Active |
| US5146431A | Method and apparatus for page recall of data in an nonvolatile DRAM memory device | Physics | 6 | Expired |
| US6683804B1 | Read/write memory arrays and methods with predetermined and retrievable latent-state patterns | Physics | 6 | Expired |
| US6618309B2 | Adjustable memory self-timing circuit | Physics | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.