Pascal Bancken
19Patents
4h-index
22Co-inventors
60Inventor score
Filing activity: Dec 21, 2000 → Apr 8, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8779781B2 | Capacitive sensor, integrated circuit, electronic device and method | Physics | 6 | Active |
| US8749142B2 | Exterior vehicle lights | Performing Operations; Transporting | 6 | Active |
| US8217558B2 | Apparatus for regulating the temperature of a light emitting diode | Electricity | 5 | Active |
| US8348505B2 | Self-calibration circuit and method for junction temperature estimation | Electricity | 4 | Active |
| US9372166B2 | Integrated circuit comprising a thermal conductivity based gas sensor | Physics | 4 | Active |
| US8471565B2 | System and method for output flux measurement of light emitting diode | Physics | 2 | Active |
| US8723443B2 | Method of controlling an LED, and an LED controller | Electricity | 2 | Active |
| US8534914B2 | System and method for estimating the junction temperature of a light emitting diode | Electricity | 1 | Active |
| US8896317B2 | Lighting unit with compensation for output frequency, and method for determining output frequency | Electricity | 1 | Active |
| US7943509B2 | Method of making an interconnect structure | Electricity | 1 | Active |
| US7361453B2 | Method for creating a pattern in a material and semiconductor structure processed therewith | Electricity | 1 | Expired |
| US9891183B2 | Breach sensor | Emerging Cross-Sectional Technologies | 1 | Active |
| US9386655B2 | Light sensor device and manufacturing method | Physics | 0 | Active |
| US8368877B2 | Measuring apparatus | Physics | 0 | Active |
| US11525793B2 | CMOS compatible dew point sensor device and method of determining a dew point | Physics | 0 | Active |
| US9081251B2 | Display device | Physics | 0 | Active |
| US9271370B2 | Method of characterising an LED device | Physics | 0 | Active |
| US11002696B2 | CMOS-compatible dew point sensor device and method of determining a dew point | Physics | 0 | Active |
| US6562694B2 | Method of manufacturing a semiconductor device comprising semiconductor elements formed in a toplayer of a silicon wafer situated on a buried insulating layer | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.