Inventor · Hopewell Junction, NY, US

Qiuyi Ye

13Patents

6h-index

14Co-inventors

59Inventor score

Filing activity: Sep 30, 1991 → Dec 22, 2007

Most-cited inventions

Patent	Title	Area	Cited by	Status
US5335219A	Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements	Physics	371	Expired
US5406509A	Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom	Physics	231	Expired
US7376001B2	Row circuit ring oscillator method for evaluating memory cell performance	Physics	66	Expired
US7301835B2	Internally asymmetric methods and circuits for evaluating static memory cell dynamic stability	Physics	59	Expired
US7304895B2	Bitline variable methods and circuits for evaluating static memory cell dynamic stability	Physics	11	Active
US7483322B2	Ring oscillator row circuit for evaluating memory cell performance	Physics	8	Active
US6908815B2	Dual work function semiconductor structure with borderless contact and method of fabricating the same	Electricity	4	Expired
US7561483B2	Internally asymmetric method for evaluating static memory cell dynamic stability	Physics	3	Active
US7015552B2	Dual work function semiconductor structure with borderless contact and method of fabricating the same	Electricity	3	Expired
US6528855B2	MOSFET having a low aspect ratio between the gate and the source/drain	Electricity	2	Expired
US7558136B2	Internally asymmetric methods and circuits for evaluating static memory cell dynamic stability	Physics	1	Active
US7515491B2	Method for evaluating leakage effects on static memory cell access time	Physics	1	Active
US6642584B2	Dual work function semiconductor structure with borderless contact and method of fabricating the same	Electricity	0	Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.