Semiconductor device with trench-like feed-throughs
US10032901B2 · kind B2 · utility
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78References
15Claims
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Key dates
| Filing date | Apr 5, 2016 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Apr 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.