Siloxane and organic-based MOL contact patterning

US10056458B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Chang Ho Maeng · Ballston Spa, US
• Andy Wei · Queensbury, US
• Anthony Ozzello · San Jose, US
• Bharat Krishnan · Mechanicville, US
• Guillaume Bouche · Albany, US
• Haifeng Sheng · Rexford, US
• Haigou Huang · Rexford, US
• Huang Liu · Singapore, SG
• Huy Cao · Rexford, US
• Ja-Hyung Han · Suwon-si, KR
• Sangwoo Lim · Austin, US
• Kenneth Allen Bates · Brunswick, US
• Shyam Sundar Pal · Sherghati, IN
• Xintuo Dai · Rexford, US
• Jinping Liu · Ballston Lake, US

Key dates

• Filing date: Jan 12, 2016
• Grant date: Aug 21, 2018
• Expiry date: Mar 31, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/511
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of MOL S/D contact patterning of RMG devices without gouging of the Rx area or replacement of the dielectric are provided. Embodiments include forming a SOG layer around a RMG structure, the RMG structure having a contact etch stop layer and a gate cap layer; forming a lithography stack over the SOG and gate cap layers; patterning first and second TS openings through the lithography stack down to the SOG layer; removing a portion of the SOG layer through the first and second TS openings, the removing selective to the contact etch stop layer; converting the SOG layer to a SiO2 layer; forming a metal layer over the SiO2 layer; and planarizing the metal and SiO2 layers down to the gate cap layer.