Structure and process to tuck fin tips self-aligned to gates

US10121852B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Bruce B. Doris · Brewster, US
• Hong He · Schenectady, US
• Sivananda K. Kanakasabapathy · Niskayuna, US
• Gauri Karve · Cohoes, US
• Fee Li Lie · Albany, US
• Derrick Liu · Albany, US
• Soon-Cheon Seo · White Plains, US
• Stuart A. Sieg · Albany, US

Key dates

• Filing date: Oct 26, 2017
• Grant date: Nov 6, 2018
• Expiry date: Oct 26, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A semiconductor structure is provided that includes a semiconductor fin portion having an end wall and extending upward from a substrate. A gate structure straddles a portion of the semiconductor fin portion. A first set of gate spacers is located on opposing sidewall surfaces of the gate structure; and a second set of gate spacers is located on sidewalls of the first set of gate spacers. One gate spacer of the second set of gate spacers has a lower portion that directly contacts the end wall of the semiconductor fin portion.