Aluminum content control of TiAIN films
US10170321B2 · kind B2 · utility
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2References
15Claims
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Key dates
| Filing date | Mar 17, 2017 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Mar 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.