Methods of forming gate contact structures and cross-coupled contact structures for transistor devices
US10236215B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed includes, among other things, forming an initial gate-to-source/drain (GSD) contact structure and an initial CB gate contact structure, wherein an upper surface of each of these contact structures are positioned at a first level. In one example, this method also includes forming a masking layer that covers the initial CB gate contact structure and exposes the initial GSD contact structure and, with the masking layer in position, performing a recess etching process on the initial GSD contact structure so as to form a recessed GSD contact structure, wherein a recessed upper surface of the recessed GSD contact structure is positioned at a second level that is below the first level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.