Patent · US Active

Dual temperature heater

US10325799B2 · kind B2 · utility

0Cited by
9References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 5, 2015
Grant dateJun 18, 2019
Priority date
Expiry dateSep 9, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/6875
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.