Semiconductor device and method of forming the semiconductor device

US10381437B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Marc A. Bergendahl · Troy, US
• Gauri Karve · Cohoes, US
• Fee Li Lie · Albany, US
• Eric R. Miller · Schenectady, US
• Robert R. Robison · Colchester, US
• John R. Sporre · Albany, US
• Sean Teehan · Rensselaer, US

Key dates

• Filing date: Dec 30, 2017
• Grant date: Aug 13, 2019
• Expiry date: Jan 3, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6757

Abstract

A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.