Gate contact structures and cross-coupled contact structures for transistor devices
US10490455B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2019 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Jan 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor and an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure. In one example, the product also includes a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor, wherein an upper surface of the GSD contact structure is positioned at a first level that is at a level above the upper surface of the first conductive source/drain contact structure, and a CB gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of the CB gate contact structure is positioned at a level that is above the first level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.