Inductively coupled plasma apparatus

US10573493B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Valentin N. Todorow · Palo Alto, US
• Samer Banna · San Jose, US
• Ankur Agarwal · Mountain View, US
• Zhigang Chen · Campbell, US
• TSE-CHIANG WANG · Concord, US
• Andrew Nguyen · San Jose, US
• Martin Jeff Salinas · San Jose, US
• Shahid Rauf · Pleasanton, US

Key dates

• Filing date: Mar 15, 2016
• Grant date: Feb 25, 2020
• Expiry date: Mar 13, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J37/3244
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.