Methods of forming gate contact structures and cross-coupled contact structures for transistor devices
US10651284B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2017 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed includes, among other things, selectively forming a gate-to-source/drain (GSD) contact opening and a CB gate contact opening in at least one layer of insulating material and forming an initial gate-to-source/drain (GSD) contact structure and an initial CB gate contact structure in their respective openings, wherein an upper surface of each of the GSD contact structure and the CB gate contact structure is positioned at a first level, and performing a recess etching process on the initial GSD contact structure and the initial CB gate contact structure to form a recessed GSD contact structure and a recessed CB gate contact structure, wherein a recessed upper surface of each of these recessed contact structures is positioned at a second level that is below the first level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.