Wafer treatment for achieving defect-free self-assembled monolayers
US10770292B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2018 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Jun 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.