Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates

US10899945B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Robert REICHARDT · Ludwigshafen am Rhein, DE
• Max Siebert · Ludwigshafen, DE
• Yongqing Lan · Potsdam, US
• Michael Lauter · Mannheim, DE
• Sheik Ansar Usman Ibrahim · Waterloo, BE
• Reza Golzarian · Beaverton, US
• Te Yu Wei · Taoyuan, TW
• Haci Osman GUEVENC · Heidelberg, DE
• Julian Proelss · Allschwil, CH
• Leonardus Leunissen · Ludwigshafen, DE

Key dates

• Filing date: Aug 9, 2016
• Grant date: Jan 26, 2021
• Expiry date: Aug 9, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/461
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.