Plasma processing using multiple radio frequency power feeds for improved uniformity
US11276562B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2020 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Mar 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.