Methods and system for cleaning semiconductor wafers

US11581205B2 · kind B2 · utility

Assignee

• ACM RESEARCH, INC. · US

Inventors

• Hui Wang · Shanghai, CN
• Fufa Chen · Cupertino, US
• Fuping Chen · Shanghai, CN
• Jian Wang · Rosharon, US
• Xi Wang · Shanghai, CN
• Xiaoyan Zhang · Shanghai, CN
• Yinuo Jin · Shanghai, CN
• Zhaowei Jia · Shanghai, CN
• Liangzhi Xie · Shanghai, CN
• Jun Wang · Nanhu, CN
• Xuejun Li · Shanghai, CN

Key dates

• Filing date: Jan 4, 2021
• Grant date: Feb 14, 2023
• Expiry date: Sep 25, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67092
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.